Job description
General information
KEY INFORMATION:
Location: Europe, Italy, Catania
Type of contract: Regular
Job open date: 06/02/2023
Company department: Process Technology Developm
STMicroelectronics is a leading semiconductor company, a world key player thanks to our 43,200 employees including 8,300 working in R&D.
ST’s products are found everywhere today. And together with our customers, we are enabling smarter driving, homes, factories, and cities, along with the next generation of mobile and Internet of Things devices. Everywhere microelectronics makes a positive contribution to people lives, ST is there.
In 2018, we were ranked by the Randstad Employer Brand Research Award among the 5 most attractive companies in France, for our values of excellence, our integrity and the respect of our employees.
POSTING PRESENTATION:
The position is focused for R&D activities and pre-industrialization steps in the field of process development for new SiC power devices.
In details, the focus of the position will be aimed to wafer bonding, thermal, oxidation and surface processes in the technology of SiC devices. Main points under development will be:
In details, the focus of the position will be aimed to wafer bonding, thermal, oxidation and surface processes in the technology of SiC devices. Main points under development will be:
- Comprehension and Setup of innovative process like wafer bonding of thin crystalline SiC layers on different substrates;
- Comprehension and Setup of High-Temperature Thermal Processes on SiC substrates for defect and stress improvements
- Comprehension and Setup of Surface reconstruction processes in SiC wafers by applying Thermal and Oxidation Process (pre and post implantation processes) in different technologies (from planar to trench designs)
- Study and support of dielectric deposition processes in order to ensure the feasibility of these processes in the developing technology
- Evaluation of new suppliers of equipment for breakthrough processes in new WBG technologies.
- Comprehension and understanding of the mechanical stress involved on all the above mentioned processes
PROFILE REQUIRED:
- Wide Bandgap Semiconductors are the core activities for power device development and the capability to have full expertise in the field of thermal, oxidation and surface reconstruction processes are a key factor.
The candidate should have:
- Knowledge in boning processes involved in semiconductor technologies with focus on SiC;
- Knowledge in Thermal processes involved in SiC technology
- Knowledge in Oxidation processes involved in SiC technology
- Knowledge in Surface reconstruction processes in SiC crystal and interfaces
- Knowledge of equipment management, control, scheduling for the above mentioned processes.
- Skilled abilities in the metrology required to control, analyze and follows consolidated and new processes.
- Knowledge of metrology needed for characterize, analyze and control required processes.
- Ability to cooperate in large and wide teams
- Ability to share and present data in effective way
- Ability to discuss and collaborate with internal and abroad partners
- Know-how of daily activities within our organization and in partnership with other organization
- Ability to build DOE for product improvements and new technologies/products
- Proactive attitude in the different projects where he/she will be involved
The Employment search is addressed to candidates of both genders, under Law 10.04.1991 n. 125, as amended by Legislative Decree n. 198/2006 which guarantees gender equality at work
- Education level required
5 - Master degree
- Experience level required
2-5 years
- Languages
English (2- Business fluent)
CONTACT & APPLY FORM:
Learn more about STMicroelectronics on: www.st.com
And ask your questions:
- LinkedIn : STMicroelectronics
- Facebook : STMicroelectronics
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